QL80T4H-A/B/C/D/E-Y 9.0mm 1W 1000mW 808nm 810nm IR Infrared Laser Diode TO5

Description

QSI QL80T4H-A/B/C/D/E-Y 9.0mm 1W 1000mW 808nm 810nm IR Infrared Laser Diode TO5
9.0mm 1W 810nm IR Infrared Laser Diode TO 5
Datasheet download:
http://www.laserlands.net/datasheet/11081028.pdf
QL80T4H-A/B/C/D/E-Y
is a MOCVD grown 808nm band laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of 1W for optoelectronic devices
such as solid state laser pumping and medical use.
APPLICATION
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Solid state laser excitation
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Medical use
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Material processes
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Measurement
FEATURES
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Optical Output Power : 1W CW
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Package Type : TO-5 (
φ
9mm)
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Polarization : TM ( Electric Field Perpendicular to the Junction Plane )
This Infrared laser diode is an industrial electronic component and used for as Industrial test, Lab, DIY. NO HANDHELD LASE USE
The laser diode is precise and sensitive optical instrument. Before carrying on some laser DIY activities, please read about the technical information first and protect your eyes before laser ray. Be sure the operator has experience in optics DIY or test. and Don't operate when the power is connected.
Do not touch the ld by your hands directly. Please use anti-static wrist strap.
Specification
Model: QL80T4H-A/B/C/D/E-Y
Output Power :1W
Wavelength: 808nm/810nm
PD: no
storage temperature:   -10 centigrade ~+40  centigrade
Dimensions TO-5 (9.0mm)